IntelliEpi
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GaAs Based
InP Based
Opto-electronics

   IntelliEPI provides a variety of electronics and optoelectronics epi structures grown on GaAs and InP for volume production requirements.  In addition, we work closely with our customers on the development of their next generation products.  What distinguishes IntelliEPI from our competitors is our proprietary in-growth sensor technology with our MBE growth experience.  IntelliEPI is able to use the in-growth sensor technology to supply customers with the best quality epi-wafers at low prices.  With the assistance of this technology, IntelliEPI is the first in this industry to develop "production ready" 4 X 4 inch InP capabilities to supply InP epi-wafers to our customers.

IntelliEPI provides epitaxial services to customers on the following epi-wafer structures:

GaAs based:  
  • PHEMT (InGaP- or AlAs- Etch Stop, E- Mode)
  • MHEMT

InP based:
  • HBT (DHBT, SHBT, C- or Be- base doping)
  • HEMT
  • RTT, RTD

Opto-electronics:
IntelliEPI will continue its research and development efforts to expand our product lines as both the customers and the technology move forward to higher performance devices.




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1250 E. Collins Blvd Richardson, TX 75081      Tel: 888.561.3535      Fax: 972.234.0069