February 10, 2011

Intelligent Epitaxy Technology, Inc announces Receiving Supplier Award

     Intelligent Epitaxy Technology, Inc. (IntelliEPI, Inc) announces that it received the 2010 Supplier Award from Skyworks Solutions Inc. for supply of pHEMT (pseudomorphic high mobility transistor) epi-wafers to Skyworks' Woburn, Ma. wafer fab. The award was presented to IntelliEPI during Skyworks' Supplier Day Conference, held January 11 in Newport Beach, Ca. This is IntelliEPI's first award in this category. IntelliEPI is the world's leading producer of pHEMT epi-wafers for smart phones and other mobile devices.

Nov 22, 2010

Intelligent Epitaxy Technology, Inc announces Technical Support Center in Japan

     Intelligent Epitaxy Technology, Inc. (IntelliEPI, Inc) today announced that it has setup a Technical Support Center in Japan (IntelliEPI Japan, Ltd.) to support increasing demand for its products in Japan from his global customers. "Nowadays, it is common for our global customers to make procurement in US and take delivery for production in Japan. IntelliEPI is excited to be broadening our footprint in Japan as part of our continuing effort to improve customer service and bring Technical Support Center closer to the customer." said Dr. Yung-Chung Kao, President/CEO of IntelliEPI, Inc. "By expanding our technical, engineering, and service capabilities within Japan, we are better positioned to efficiently meet increasing customer demand." read more =>

March 5, 2007

Intelliegent Epitaxy Technology, Inc. completes ISO 9001:2000 registration

     Richardson, TX - We are proud to announce that Intelligent Epitaxy Technology, Inc. (IntelliEPI) is now ISO 9001:2000 certified as of March 5, 2007. This certification recognizes that IntelliEPI, as an organization, has a quality management system in place to ensure consistent quality of products and services. read more =>

November 10, 2003

Intelligent Epitaxy Technology, Inc. taking delivery of another Riber 6000 Production MBE System in the 4th Quarter of 2003 to meet 2004 market demand

     Richardson, TX – Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leading provider of Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries, announces its intention to take delivery of another Riber 6000 multi-wafer production MBE reactor during the 4th quarter of 2003. read more =>

July 26, 2002

Intelligent Epitaxy Technology, Inc. Received 2001 Supplier of the Year Award from Vitesse Semiconductor Corporation for Supplying InP HBT Epiwafers

     Richardson, TX – Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries with its proprietary real time in-situ growth monitoring technology, received the 2001 Supplier of the Year Award from Vitesse Semiconductor Corporation. IntelliEPI has been supplying InP heterojunction bipolar transistor (HBT) wafers grown by molecular beam epitaxy (MBE) systems to Vitesse for high performance communication applications over the past two years. read more =>

June 26, 2002

Intelligent Epitaxy Technology, Inc. Moved into Its New Headquarters with Expanded Capacity to Meet the Demands from Customers

     Richardson, TX . Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries with its proprietary real time in-situ growth monitoring technology, has moved into its newly constructed headquarters. The new facility consists a total of 23,000 square feet of space in which 12,000 square feet are dedicated for production use. The production capacities at the new headquarters will be more than double its old facility.s capacities and its office space will be about three times than its old facility to house more engineers and supporting staff. read more =>

November 26, 2001

Intelligent Epitaxy Technology, Inc. Introduced Carbon Doped InP HBT Epiwafers for 40 Gb/s Optical Networks

     Richardson, TX . Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries with its proprietary real time in-situ growth monitoring technology, today announced the introduction of carbon-doped InP heterojunction bipolar transistor (HBT) wafers grown by molecular beam epitaxy (MBE) systems. read more =>

October 10, 2000

Intelligent Epitaxy Technology, Inc. Successfully Raises $25 Million in the Latest Round of Venture Funding

     Richardson, TX – Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing compound semiconductor epitaxial wafers to electronics and optoelectronics industries with its proprietary real time in-situ growth monitoring technology, today announced that it has raised financing totaling $25 million dollars.The completion of this round will allow IntelliEPI to expand its production capacity, especially in the 6 inch GaAs epi wafers production, accelerate its product roadmap, and continue financing revenue growth.read more =>