March 5, 2007

Intelliegent Epitaxy Technology, Inc. completes ISO 9001:2000 registration

     Richardson, TX - We are proud to announce that Intelligent Epitaxy Technology, Inc. (IntelliEPI) is now ISO 9001:2000 certified as of March 5, 2007. This certification recognizes that IntelliEPI, as an organization, has a quality management system in place to ensure consistent quality of products and services. read more =>

November 10, 2003

Intelligent Epitaxy Technology, Inc. taking delivery of another Riber 6000 Production MBE System in the 4th Quarter of 2003 to meet 2004 market demand

     Richardson, TX – Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leading provider of Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries, announces its intention to take delivery of another Riber 6000 multi-wafer production MBE reactor during the 4th quarter of 2003. read more =>

July 26, 2002

Intelligent Epitaxy Technology, Inc. Received 2001 Supplier of the Year Award from Vitesse Semiconductor Corporation for Supplying InP HBT Epiwafers

     Richardson, TX – Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries with its proprietary real time in-situ growth monitoring technology, received the 2001 Supplier of the Year Award from Vitesse Semiconductor Corporation. IntelliEPI has been supplying InP heterojunction bipolar transistor (HBT) wafers grown by molecular beam epitaxy (MBE) systems to Vitesse for high performance communication applications over the past two years. read more =>

June 26, 2002

Intelligent Epitaxy Technology, Inc. Moved into Its New Headquarters with Expanded Capacity to Meet the Demands from Customers

     Richardson, TX . Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries with its proprietary real time in-situ growth monitoring technology, has moved into its newly constructed headquarters. The new facility consists a total of 23,000 square feet of space in which 12,000 square feet are dedicated for production use. The production capacities at the new headquarters will be more than double its old facility.s capacities and its office space will be about three times than its old facility to house more engineers and supporting staff. read more =>

November 26, 2001

Intelligent Epitaxy Technology, Inc. Introduced Carbon Doped InP HBT Epiwafers for 40 Gb/s Optical Networks

     Richardson, TX . Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries with its proprietary real time in-situ growth monitoring technology, today announced the introduction of carbon-doped InP heterojunction bipolar transistor (HBT) wafers grown by molecular beam epitaxy (MBE) systems. read more =>

October 10, 2000

Intelligent Epitaxy Technology, Inc. Successfully Raises $25 Million in the Latest Round of Venture Funding

     Richardson, TX – Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing compound semiconductor epitaxial wafers to electronics and optoelectronics industries with its proprietary real time in-situ growth monitoring technology, today announced that it has raised financing totaling $25 million dollars.The completion of this round will allow IntelliEPI to expand its production capacity, especially in the 6 inch GaAs epi wafers production, accelerate its product roadmap, and continue financing revenue growth.read more =>