The Company

     Intelligent Epitaxy Technology, Inc. (IntelliEPI) was established in January 1999 in Richardson, Texas to supply epitaxy-based compound semiconductor epi-wafers to electronics and optoelectronics industries.

IntelliEPI utilizes its proprietary real time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on GaAs and InP substrates.

What distinguishes IntelliEPI from the competitors is our proprietary in-growth sensor technology with our MBE growth experience. IntelliEPI owns three U.S. patents on real time in situ growth sensor technology. This proprietary monitoring technology is the first to be implemented in multi-wafer production MBE systems. IntelliEPI performs in situ analysis on growth parameters such as layer thickness, composition, and growth rates to optimize each growth run to supply customers with best quality and inexpensive epi-wafers.