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Name
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Source
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340 kb
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GaAsSb-Based HBTS Grown By Production MBE System
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International Conference on Indium Phosphide and Related Materials (IPRM '04)
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354 kb
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Ultra low background InGaAs Epi-layer on InP for PIN applications by production MBE
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International Conference on Indium Phosphide and Related Materials (IPRM '04)
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609 kb
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InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM)
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Journal of Crystal Growth 251 (2003) p.124-29
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686 kb
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Production InP based MBE HBT Growth and Improvement with Real-Time Monitoring
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By: Y.C. Kao, P. Pinsukanjana, J.R. Thomason, K. Vargason, and K. Lee
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333 kb
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(Abstract) MBE, Production Ready? Sensor Based MBE for PHEMT Growth
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Presented by: Yung-Chung Kao and Paul Pinsukanjana
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542 kb
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MBE, Production Ready? Sensor Based MBE for PHEMT Growth
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Presented by Dr. Yung-Chung Kao, President/CEO
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Customer Publications
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171 kb
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High-power distributed Bragg reflector lasers operating at 1065nm |
ELECTRONICS LETTERS Volume 43.,No. 14 (2007)
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359 kb
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12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710 GHz and fMAX=340 GHz |
APPLIED PHYSICS LETTERS 87, 252109 (2005)
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207 kb
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InP/InGaAs SHBTs with 75nm collector and fT>500 GHz
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Electron Device Letters, IEEE. October 2003, p.384- 386. Volume 29, Issue 30
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409 kb
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Vertical scaling of 0.25-/spl mu/ emitter InP/InGaAs single heterojunction bipolar transistors with f/sub T/ of 452 GHz
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Electron Device Letters, IEEE. July 2003, p.436-38. Volume 24, Issue 7
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522 kb
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Low-Power High-Speed Operation of Submicron InP�InGaAs SHBTs at 1mA
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Electron Device Letters, IEEE. July 2003, p.427-29. Volume 24, Issue 7
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342 kb
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Ultra high-speed InP-InGaAs SHBTs with f/sub max/ of 478 GHz
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Electron Device Letters, IEEE. June 2003, p.384-86. Volume 24, Issue 6
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254 kb
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Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz
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Electron Device Letters, IEEE. May 2003, p.292-94. Volume 24, Issue 5
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